PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN013-80YS,115
• Description: MOSFET N-CH 80V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-80YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 2420pF @ 40V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19.8 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 60 A
• Power Dissipation: 106 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4911-2; 934063934115

NXP Semiconductors
PSMN013-80YS_1
Product data sheet
Fig 1.
Fig 3.
10
10
10
(A)
(A)
I
I
10
60
40
20
D
D
-1
3
2
1
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
1
Limit R
50
DSon
= V
DS
100
/ I
D
150
T
003aad230
mb
10
(°C)
200
Rev. 01 — 25 June 2009
DC
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
1ms
10ms
100ms
10μ s
100μ s
50
PSMN013-80YS
100
V
DS
(V)
150
© NXP B.V. 2009. All rights reserved.
T
003aad314
mb
03aa16
(°C)
10
200
3
3 of 13