STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 17

• Manufacturer Part Number: STB25NM60N
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5003-2

STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
6
Revision history
Table 9.
23-May-2005
30-Nov-2004
22-Mar-2005
08-Sep-2005
28-Sep-2005
25-Aug-2006
14-Nov-2006
08-Jun-2005
26-Oct-2005
23-Jun-2006
19-Jan-2007
11-Jun-2008
Date
Document revision history
Revision
10
11
12
1
2
3
4
5
6
7
8
9
First release.
Modified title
Inserted some values in
Inserted new row in
New value for C
Added curves
Complete version
New template, new value on
Wrong title on first page
Modified
Typo mistake on
– Updated R
– Corrected capacitance value in
– Update
Avalanche characteristics
Figure 13: Capacitance variations
DS(on)
oss eq
Table 7
max value in
Table 6
in
Table 6
Table 7
Changes
Absolute maximum ratings
Table 5
Table 6
Revision history
17/18