STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 4

• Manufacturer Part Number: STB25NM60N
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5003-2

Electrical characteristics
2
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Electrical characteristics
(T
Table 5.
1. Characteristic value at turn off on inductive load
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
dv/dt
R
CASE
V
oss eq.
(BR)DSS
g
I
I
increases from 0 to 80% V
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
R
oss eq.
oss
rss
iss
gd
gs
g
g
(1)
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Drain source voltage slope
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
V
(see Figure 19)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
D
GS
GS
GS
DD
DS
DS
DS
DS
DS
GS
GS
DD
GS
= 1 mA, V
=15 V
= 10 V
= 480 V, I
= Max rating
= Max rating, @125 °C
= ± 20 V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 0, V
= 480 V, I
= 10 V,
Test conditions
Test conditions
GS
,
, I
DS
I
D
GS
D
D
=11 A
= 0 to 480 V
D
= 250 µA
D
= 10.5 A
= 0
= 21 A,
=21 A,
Min.
600
Min.
2
0.130 0.160
Typ.
2400
Typ.
200
310
1.6
17
25
84
14
44
48
3
oss
when V
Max. Unit
Max. Unit
100
100
1
4
DS
V/ns
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
S
Ω
V
V
Ω