STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 5

• Manufacturer Part Number: STB25NM60N
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5003-2

STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
r
rr
rr
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see Figure 23)
I
V
(see Figure 23)
SD
SD
SD
V
R
(see Figure 18)
DD
DD
DD
G
= 21 A, V
= 21 A, di/dt = 100 A/µs
= 21 A, di/dt = 100 A/µs
= 4.7 Ω V
= 100 V
= 100 V, T
=300 V, I
Test conditions
Test conditions
GS
GS
D
j
= 150 °C
= 0
= 10 A
= 10 V
Electrical characteristics
Min.
Min
Typ.
33.6
34.5
Typ. Max. Unit
24.5
427
526
7.2
9.1
18
94
24
Max
1.3
21
84
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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