STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 3

MOSFET N-CH 600V 21A D2PAK

STB25NM60N

Manufacturer Part Number
STB25NM60N
Description
MOSFET N-CH 600V 21A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB25NM60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 50V
Power - Max
160W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5003-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB25NM60N
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB25NM60N
Manufacturer:
ST
Quantity:
10 000
Part Number:
STB25NM60N
Manufacturer:
ST
0
Part Number:
STB25NM60N
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB25NM60N-1
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB25NM60N-1
Manufacturer:
ST
0
Part Number:
STB25NM60N-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB25NM60ND
Manufacturer:
ST
0
STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
R
Symbol
R
dv/dt
R
I
DM
P
thj-case
thj-amb
V
thj-pcb
E
V
V
T
I
AR
T
I
I
TOT
T
SD
ISO
GS
AS
DS
stg
D
D
l
j
(2)
(3)
≤ 21 A, di/dt ≤ 400 A/µs, V
Thermal resistance junction-case
max
Thermal resistance junction-pcb
max
Thermal resistance junction-
ambient max
Maximum lead temperature for
soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
J
= 25 °C, I
Parameter
Parameter
DD
Parameter
C
D
=I
= 25 °C
=80% V
GS
AR
, V
= 0)
DD
(BR)DSS
C
C
= 25 °C
= 100 °C
= 50 V)
C
=25 °C)
TO-220 I²PAK D²PAK TO-247 TO-220FP
--
62.5
--
0.78
D²PAK - TO-247
TO-220 - I²PAK
30
Value
--
160
300
21
13
84
--
–55 to 150
Value
600
±25
150
50
15
Value
--
850
10
Electrical ratings
TO-220FP
21
13
84
2500
40
62.5
3.1
--
(1)
(1)
(1)
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
°C
W
V
V
A
A
A
V
A
3/18

Related parts for STB25NM60N