STB25NM60N STMicroelectronics, STB25NM60N Datasheet - Page 7

• Manufacturer Part Number: STB25NM60N
• Description: MOSFET N-CH 600V 21A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 50V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5003-2

STB25NM60Nx - STF25NM60N - STP25NM60N - STW25NM60N
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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