STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 11

• Manufacturer Part Number: STB25NM50N-1
• Description: MOSFET N-CH 500V 22A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM50N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2565pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A to 22 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5729

STx25NM50N
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
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