STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 3
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STB25NM50N-1
Manufacturer Part Number
STB25NM50N-1
Description
MOSFET N-CH 500V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB25NM50N-1.pdf
(18 pages)
Specifications of STB25NM50N-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2565pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A to 22 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5729
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB25NM50N-1
Manufacturer:
ON
Quantity:
20 000
Part Number:
STB25NM50N-1
Manufacturer:
ST
Quantity:
20 000
STx25NM50N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
dv/dt
Symbol
R
Symbol
R
I
SD
DM
P
V
V
thj-case
V
T
thj-amb
E
I
I
TOT
I
T
ISO
GS
T
DS
stg
AR
D
D
AS
j
l
(2)
≤ 22 A, di/dt ≤ 400 A/µs, V
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
Parameter
Parameter
DD
Parameter
C
D
= 25 °C
= 80% V
GS
= I
AR
= 0)
, V
(BR)DSS
C
C
DD
= 25 °C
= 100 °C
C
= 50 V)
=25 °C)
D²PAK, TO-247
D²PAK, TO-247
TO-220, I²PAK
TO-220, I²PAK
1.28
160
0.78
22
14
88
--
–55 to 150
Value
Value
Value
350
500
±25
150
62.5
300
15
10
Electrical ratings
TO-220FP
TO-220FP
14
22
88
2500
0.32
3.1
40
(1)
(1)
(1)
W/°C
Unit
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
A
W
°C
V
V
A
A
A
V
3/18