STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 14

• Manufacturer Part Number: STB25NM50N-1
• Description: MOSFET N-CH 500V 22A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM50N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2565pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A to 22 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5729

Package mechanical data
14/18
DIM.
G1
F1
F2
L2
L3
L4
L5
L6
L7
G
Ø
A
B
D
E
F
H
0.45
0.75
1.15
1.15
4.95
28.6
15.9
MIN.
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
TO-220FP MECHANICAL DATA
mm.
TYP
16
MAX.
2.75
10.4
30.6
10.6
16.4
4.6
2.7
0.7
1.7
1.7
5.2
2.7
3.6
9.3
3.2
1
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
.0385
0.114
0.626
0.354
0.118
MIN.
0.630
TYP.
inch
STx25NM50N
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
MAX.