STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 5

MOSFET N-CH 500V 22A I2PAK

STB25NM50N-1

Manufacturer Part Number
STB25NM50N-1
Description
MOSFET N-CH 500V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet

Specifications of STB25NM50N-1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
140 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
84nC @ 10V
Input Capacitance (ciss) @ Vds
2565pF @ 25V
Power - Max
160W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.14 Ohms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
14 A to 22 A
Power Dissipation
160 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5729

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB25NM50N-1
Manufacturer:
ON
Quantity:
20 000
Part Number:
STB25NM50N-1
Manufacturer:
ST
0
Part Number:
STB25NM50N-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STB25NM50N-1,B25NM50N
Manufacturer:
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0
STx25NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
rr
rr
r
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
I
I
V
(see Figure 23)
I
V
(see Figure 23)
SD
SD
SD
V
R
(see Figure 18)
DD
DD
DD
G
= 22 A, V
= 22 A, di/dt = 100 A/µs
= 22 A, di/dt = 100 A/µs
= 4.7 Ω V
= 100 V
= 100 V, T
= 250 V, I
Test conditions
Test conditions
GS
GS
j
D
= 150 °C
= 0
= 11 A
= 10 V
Electrical characteristics
Min.
Min
Typ. Max
8.25
Typ. Max. Unit
460
532
6.9
30
31
23
23
75
22
1.3
22
88
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18

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