STB25NM50N-1 STMicroelectronics, STB25NM50N-1 Datasheet - Page 17

• Manufacturer Part Number: STB25NM50N-1
• Description: MOSFET N-CH 500V 22A I2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB25NM50N-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 84nC @ 10V
• Input Capacitance (ciss) @ Vds: 2565pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14 A to 22 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5729

STx25NM50N
6
Revision history
Table 9.
16-May-2005
30-Nov-2004
08-Mar-2005
22-Mar-2005
07-Sep-2005
09-Nov-2005
14-Nov-2006
17-Nov-2008
17-Jun-2005
19-Jan-2007
13-Apr-2005
28-Apr-2005
05-Oct-2005
Date
Document revision history
Revision
10
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First release.
Inserted curves
Modified title
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Inserted ecopack indication
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Corrected marking in
Figure 11
Figure
Table 7
Table 7
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Table 1
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Figure 9
Changes
Absolute maximum ratings
Revision history
17/18