IRF7404QTRPBF International Rectifier, IRF7404QTRPBF Datasheet

MOSFET P-CH 20V 6.7A 8-SOIC

IRF7404QTRPBF

Manufacturer Part Number
IRF7404QTRPBF
Description
MOSFET P-CH 20V 6.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7404QTRPBF.pdf (9 pages)

Specifications of IRF7404QTRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7404QTRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7404QTRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Description
www.irf.com
These HEXFET
utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET
Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
θ
Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in package

‚
„
G
S
S
S
1
2
3
4
Top View
8
7
6
5
D
D
D
D
A
SO-8
®
DS(on)
DSS
Ω
1

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IRF7404QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET's in package utilize the lastest processing techniques ...

Page 2

  ‚ ≤ ≤ ≤ ≤ Ω ƒ ≤ „ ƒ ƒ ƒ Ω Ω, ƒ ƒ ƒ ≤ ≤ www.irf.com ...

Page 3

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V 100 - 2.0V BOTTOM - 1.5V 10 -1.5V 1 20µs PULSE WIDTH T = 25°C J 0.1 0.01 0 Drain-to-Source Voltage (V) ...

Page 4

1MHz iss rss oss iss 2000 C oss 1000 C rss 0 ...

Page 5

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com -4.5V ...

Page 6

Charge 6 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. -3mA Current Sampling Resistors www.irf.com - ...

Page 7

Driver Gate Drive P.W. D.U. Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • - „ - • • • Period D = Period Waveform Body Diode Forward ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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