IRF7403 International Rectifier, IRF7403 Datasheet
IRF7403
Specifications of IRF7403
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IRF7403 Summary of contents
Page 1
... Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA PRELIMINARY iew Max. @ 10V 9 10V 8 10V 5.4 GS 2.5 0.02 ±20 5.0 - 150 Typ. ––– 9.1245B IRF7403 V = 30V DSS R = 0.022 DS(on Units W/°C V V/ns °C Max. Units 50 °C/W 8/25/97 ...
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... IRF7403 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... T = 150 50V DS 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics TOP BOTT Fig 2. Typical Output Characteristics ° 15V Fig 4. Normalized On-Resistance IRF7403 VGS 15V 10V 4.5 V 20µ ° Drain-to-S ource V oltage ( 6 Junction T emperature (°C) J Vs. Temperature ...
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... IRF7403 0V iss rss oss Drain-to-Source V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage TED Fig 6. Typical Gate Charge Vs. 100 Single Pulse 0 Fig 8. Maximum Safe Operating Area = 4. TES SEE FIG Total Gate Charge ( Gate-to-Source Voltage ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% 125 150 V GS ° d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7403 D.U. µ d(off ...
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... IRF7403 Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit + ...
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... Logic Level and 3V Drive Devices GS Fig 13. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF7403 + * *** ...
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... IRF7403 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 0.25 (.010 Part Marking Information SO 101 101 ° INCHES MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 ...
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... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com . . 5 5 2 8.1 0 (.31 8) 1 7 ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7403 0 .35 (. .25 (. . . .20 (. . ...