PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet

MOSFET N-CH 80V 22A TO-220AB3

PSMN050-80PS,127

Manufacturer Part Number
PSMN050-80PS,127
Description
MOSFET N-CH 80V 22A TO-220AB3
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PSMN050-80PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
51 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
633pF @ 12V
Power - Max
56W
Mounting Type
Through Hole
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
80 V
Continuous Drain Current
22 A
Power Dissipation
56 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4901-5
934063909127
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol Parameter
I
Dynamic characteristics
Q
D
GD
High efficiency due to low switching
and conduction losses
Repetitive avalanche rated
DC-to-DC converters
Load switching
PSMN050-80PS
N-channel 80 V 50 mΩ standard level MOSFET
Rev. 01 — 10 June 2009
drain current
gate-drain charge
Quick reference
Conditions
T
see
V
V
see
mb
GS
DS
Figure 1
Figure 15
= 25 °C; V
= 40 V; see
= 10 V; I
D
GS
= 25 A;
Figure
= 10 V;
Suitable for standard level gate drive
sources
Motor control
Server power supplies
14;
Min
-
-
Product data sheet
Typ
-
2.3
Max
22
-
Unit
A
nC

Related parts for PSMN050-80PS,127

PSMN050-80PS,127 Summary of contents

Page 1

... PSMN050-80PS N-channel mΩ standard level MOSFET Rev. 01 — 10 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...

Page 2

... SC-46 TO-220AB PSMN050-80PS_1 Product data sheet N-channel mΩ standard level MOSFET Simplified outline SOT78 (TO-220AB; SC-46) Rev. 01 — 10 June 2009 PSMN050-80PS Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...

Page 3

... Figure ≤ 10 µs; pulsed ° °C; see Figure °C mb ≤ 10 µs; pulsed ° see Figure ° j(init Ω; unclamped R GS Rev. 01 — 10 June 2009 PSMN050-80PS Min Max - - -55 175 -55 175 - [1][ [3] ≤ sup © NXP B.V. 2009. All rights reserved. ...

Page 4

... N-channel mΩ standard level MOSFET 003aad056 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature (A) (1) 10 ( Rev. 01 — 10 June 2009 PSMN050-80PS 03aa16 50 100 150 T (°C) mb 003aad057 10 t (ms) AL © NXP B.V. 2009. All rights reserved. 200 ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN050-80PS_1 Product data sheet N-channel mΩ standard level MOSFET Conditions see Figure Rev. 01 — 10 June 2009 PSMN050-80PS Min Typ Max - - 2.7 003aad055 t p δ ( © NXP B.V. 2009. All rights reserved. ...

Page 6

... 100 ° see Figure ° MHz see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) Rev. 01 — 10 June 2009 PSMN050-80PS Min Typ Max Unit 4 µ 100 µ 100 100 mΩ [ mΩ Ω 3 1.9 ...

Page 7

... A/µ 003aad046 100 R DSon 5.5 (mΩ ( (V) DS Fig 6. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 10 June 2009 PSMN050-80PS Min Typ Max - 0.86 1 003aad047 (A) D © NXP B.V. 2009. All rights reserved. Unit V ns ...

Page 8

... Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad053 100 R DSon (mΩ (A) D Fig 10. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 10 June 2009 PSMN050-80PS 003aad052 (V) GS 003aad054 (V) GS © NXP B.V. 2009. All rights reserved ...

Page 9

... T (°C) j Fig 12. Sub-threshold drain current as a function of gate-source voltage 003aad045 GS(pl) V GS(th Fig 14. Gate charge waveform definitions 120 150 180 T (°C) j Rev. 01 — 10 June 2009 PSMN050-80PS 03aa35 min typ max ( GS1 GS2 G(tot) 003aaa508 © NXP B.V. 2009. All rights reserved. ...

Page 10

... C (pF (nC Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 100 175 ° 0.5 1 Rev. 01 — 10 June 2009 PSMN050-80PS 003aad051 (V) DS 003aad049 = 25 °C 1.5 V (V) SD © NXP B.V. 2009. All rights reserved. iss oss rss ...

Page 11

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 01 — 10 June 2009 PSMN050-80PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

Page 12

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN050-80PS_1 20090610 PSMN050-80PS_1 Product data sheet N-channel mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 10 June 2009 PSMN050-80PS Supersedes - © NXP B.V. 2009. All rights reserved ...

Page 13

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 10 June 2009 PSMN050-80PS © NXP B.V. 2009. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN050-80PS_1 All rights reserved. Date of release: 10 June 2009 ...

Related keywords