PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 4
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PSMN050-80PS,127
Manufacturer Part Number
PSMN050-80PS,127
Description
MOSFET N-CH 80V 22A TO-220AB3
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN050-80PS127.pdf
(14 pages)
Specifications of PSMN050-80PS,127
Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
51 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
633pF @ 12V
Power - Max
56W
Mounting Type
Through Hole
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
80 V
Continuous Drain Current
22 A
Power Dissipation
56 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4901-5
934063909127
934063909127
NXP Semiconductors
PSMN050-80PS_1
Product data sheet
Fig 1.
Fig 3.
(A)
I
30
D
20
10
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
100
10
10
(A)
10
I
150
-1
AL
2
1
10
-3
T
003aad056
mb
(°C)
200
10
Rev. 01 — 10 June 2009
-2
10
-1
(1)
(2)
(3)
Fig 2.
P
(%)
der
N-channel 80 V 50 mΩ standard level MOSFET
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
003aad057
AL
(ms)
10
50
PSMN050-80PS
100
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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