PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
PSMN050-80PS_1
Product data sheet
Fig 1.
Fig 3.
(A)
I
30
D
20
10
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
100
10
10
(A)
10
I
150
-1
AL
2
1
10
-3
T
003aad056
mb
(°C)
200
10
Rev. 01 — 10 June 2009
-2
10
-1
(1)
(2)
(3)
Fig 2.
P
(%)
der
N-channel 80 V 50 mΩ standard level MOSFET
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
003aad057
AL
(ms)
10
50
PSMN050-80PS
100
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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