PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
PSMN050-80PS_1
Product data sheet
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS(th)
(V)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
a
5
4
3
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
-30
0
0
30
60
60
max
min
typ
90
120
120
T
003aad045
150
j
(°C)
T
03aa32
j
(°C)
180
180
Rev. 01 — 10 June 2009
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate charge waveform definitions
(A)
I
10
10
10
10
10
10
D
N-channel 80 V 50 mΩ standard level MOSFET
−1
−2
−3
−4
−5
−6
gate-source voltage
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
2
I
Q
D
PSMN050-80PS
GS
Q
min
GS2
Q
G(tot)
typ
Q
GD
4
max
V
© NXP B.V. 2009. All rights reserved.
GS
003aaa508
(V)
03aa35
6
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