PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN050-80PS_1
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
10
1
-1
-2
-3
-4
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
0.02
-6
δ = 0.5
0.2
0.1
0.05
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
single shot
10
-5
Conditions
see
Figure 4
10
-4
Rev. 01 — 10 June 2009
10
-3
N-channel 80 V 50 mΩ standard level MOSFET
10
-2
PSMN050-80PS
Min
-
10
P
-1
Typ
-
t
p
T
t
© NXP B.V. 2009. All rights reserved.
p
(s)
003aad055
δ =
Max
2.7
T
t
p
t
1
Unit
K/W
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