PSMN4R3-30PL,127 NXP Semiconductors, PSMN4R3-30PL,127 Datasheet - Page 6
![MOSFET N-CH 30V 100A TO-220AB3](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN4R3-30PL,127
Manufacturer Part Number
PSMN4R3-30PL,127
Description
MOSFET N-CH 30V 100A TO-220AB3
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN4R3-30PL127.pdf
(13 pages)
Specifications of PSMN4R3-30PL,127
Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.3 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
41.5nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 12V
Power - Max
103W
Mounting Type
Through Hole
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
100 A
Power Dissipation
103 W
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4897-5
934063918127
934063918127
NXP Semiconductors
Table 6.
[1]
[2]
PSMN4R3-30PL_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
(S)
g
fs
120
80
40
0
drain current; typical values
Forward transconductance as a function of
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
40
…continued
60
Conditions
I
see
I
V
S
S
DS
= 25 A; V
= 20 A; dI
80
Figure 17
= 30 V
003aad244
I
D
(A)
100
GS
S
Rev. 01 — 16 June 2009
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
(A)
GS
I
D
100
80
60
40
20
0
= 0 V;
function of gate-source voltage; typical values
Transfer characteristics: drain current as a
0
N-channel 30 V 4.3 mΩ logic level MOSFET
1
T
j
= 175 °C
PSMN4R3-30PL
2
Min
-
-
-
3
Typ
0.81
35
30
25 °C
© NXP B.V. 2009. All rights reserved.
4
003aad241
V
Max
1.2
-
-
GS
(V)
5
Unit
V
ns
nC
6 of 13