PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN7R6-60PS,127
• Description: MOSFET N-CH 60V 92A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R6-60PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 2651pF @ 30V
• Power - Max: 149W
• Mounting Type: Through Hole
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4970-5

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN7R6-60PS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
(K/W)
Z
th
10
10
10
−1
−3
1
−2
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
δ = 0.5
Thermal characteristics
0.02
0.05
0.2
0.1
Parameter
thermal resistance from junction to
mounting base
single shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 03 — 28 October 2010
Conditions
see
10
−3
Figure 4
N-channel 60 V 7.8 mΩ standard level MOSFET
10
−2
PSMN7R6-60PS
Min
-
10
P
−1
t
Typ
0.49
p
t
T
p
(s)
© NXP B.V. 2010. All rights reserved.
003aad662
δ =
Max
1.01
T
t
t
p
1
Unit
K/W
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