PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 8

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PSMN7R6-60PS,127

Manufacturer Part Number
PSMN7R6-60PS,127
Description
MOSFET N-CH 60V 92A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R6-60PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.8 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
92A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
38.7nC @ 10V
Input Capacitance (ciss) @ Vds
2651pF @ 30V
Power - Max
149W
Mounting Type
Through Hole
Gate Charge Qg
38.7 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.8 mOhms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
92 A
Power Dissipation
149 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4970-5
NXP Semiconductors
PSMN7R6-60PS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate charge waveform definitions
R
(mΩ)
DSon
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
4.5
20
Q
GS1
V
GS
I
Q
D
GS
40
(V) = 15
Q
5.0
GS2
Q
G(tot)
60
Q
10.0
GD
80
8.0
All information provided in this document is subject to legal disclaimers.
003aad667
003aaa508
I
D
(A)
5.5
6.0
Rev. 03 — 28 October 2010
100
Fig 14. Gate-source voltage as a function of gate
Fig 16. Input, output and reverse transfer capacitances
(pF)
V
N-channel 60 V 7.8 mΩ standard level MOSFET
(V)
C
GS
10
10
10
10
8
6
4
2
0
4
3
2
10
charge; typical values
as a function of drain-source voltage; typical
values
0
−2
V
DS
10
10
= 12 V
−1
PSMN7R6-60PS
20
30 V
1
30
10
© NXP B.V. 2010. All rights reserved.
40
V
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003aad671
Q
DS
48 V
G
(V)
(nC)
C
C
C
iss
oss
rss
10
50
2
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