PSMN7R6-60PS,127 NXP Semiconductors, PSMN7R6-60PS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R6-60PS,127
• Description: MOSFET N-CH 60V 92A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R6-60PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 92A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 38.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 2651pF @ 30V
• Power - Max: 149W
• Mounting Type: Through Hole
• Gate Charge Qg: 38.7 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.8 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 149 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4970-5

NXP Semiconductors
PSMN7R6-60PS
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
(mΩ)
DSon
GS(th)
(V)
20
16
12
5
4
3
2
1
0
8
4
0
−60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
60
10
max
min
typ
120
15
All information provided in this document is subject to legal disclaimers.
V
003aad666
003aad280
T
GS
j
(°C)
(V)
Rev. 03 — 28 October 2010
180
20
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
N-channel 60 V 7.8 mΩ standard level MOSFET
10
10
10
10
10
10
D
a
2.4
1.6
1.2
0.8
0.4
−1
−2
−3
−4
−5
−6
2
0
-60
gate-source voltage
factor as a function of junction temperature.
0
0
2
PSMN7R6-60PS
min
60
typ
4
120
max
V
© NXP B.V. 2010. All rights reserved.
GS
003aad696
T
j
(V)
(°C)
03aa35
180
6
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