SI2302DS,215 NXP Semiconductors, SI2302DS,215 Datasheet

MOSFET N-CH 20V 2.5A SOT23

SI2302DS,215

Manufacturer Part Number
SI2302DS,215
Description
MOSFET N-CH 20V 2.5A SOT23
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.SI2302DS215.pdf (12 pages)

Specifications of SI2302DS,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
85 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
650mV @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
230pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Gate Charge Qg
5.4 nC
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
56 mOhms
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
2.5 A
Power Dissipation
0.83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056632215 SI2302DS T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Pinning - SOT23, simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D088
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
SI2302DS in SOT23.
SI2302DS
N-channel enhancement mode field-effect transistor
Rev. 02 — 20 November 2001
TrenchMOS™ technology
Very fast switching
Logic level compatible
Subminiature surface mount package.
Battery management
High speed switch
Low power DC to DC converter.
1
technology.
Simplified outline
Top view
1
SOT23
3
MSB003
2
Symbol
MBB076
g
d
s
Product data

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SI2302DS,215 Summary of contents

Page 1

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: SI2302DS in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder point mounted on a metal clad substrate; th(j-sp) 7.1 Transient thermal impedance th(j-sp) (K/ 0.5 0.2 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. 0.1 R ...

Page 7

Philips Semiconductors 1.2 V GS(th) (V) typ 0.8 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors ( 150 º 0.4 0 and 150 Fig 12. Source (diode forward) current ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 02 20011120 - Includes product data; second version; supersedes initial version 03 september 2001. • Table 5 “Characteristics” • Figure 9 • Figure 10 01 20010903 - ...

Page 11

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 12

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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