SI2302DS,215 NXP Semiconductors, SI2302DS,215 Datasheet - Page 4

• Manufacturer Part Number: SI2302DS,215
• Description: MOSFET N-CH 20V 2.5A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI2302DS,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 650mV @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Gate Charge Qg: 5.4 nC
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056632215 SI2302DS T/R

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 09107
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
T
sp
= 25 C
thermal resistance from junction to solder point mounted on a metal clad substrate;
Thermal characteristics
Z th(j-sp)
(K/W)
10 3
10 2
10
1
10 -4
0.2
0.1
0.05
0.02
= 0.5
7.1 Transient thermal impedance
single pulse
10 -3
Rev. 02 — 20 November 2001
10 -2
Conditions
N-channel enhancement mode field-effect transistor
10 -1
1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
P
t p
Figure 4
T
t p (s)
=
SI2302DS
03ae91
t p
T
t
10
Value Unit
150
4 of 12
K/W