SI2302DS,215 NXP Semiconductors, SI2302DS,215 Datasheet - Page 3

• Manufacturer Part Number: SI2302DS,215
• Description: MOSFET N-CH 20V 2.5A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI2302DS,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 650mV @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Gate Charge Qg: 5.4 nC
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056632215 SI2302DS T/R

Philips Semiconductors
9397 750 09107
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
P der
(%)
function of solder point temperature.
= 25 C; I
120
80
40
=
0
----------------------
P
0
10 -1
10 -2
(A)
I D
10 2
10
tot 25 C
1
P
10 -1
tot
DM
is single pulse.
50
100%
100
R DSon = V DS / I D
150
T sp (
03aa17
o
C)
1
200
Rev. 02 — 20 November 2001
DC
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
I
der
I der
(%)
120
function of solder point temperature.
80
40
=
0
------------------ -
I
0
D 25 C
10
I
D
50
100%
t p = 10 µs
1 ms
10 ms
100 ms
V DS (V)
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
100
150
SI2302DS
03ae92
T sp (
10 2
03aa25
o
C)
200
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