SI2302DS,215 NXP Semiconductors, SI2302DS,215 Datasheet - Page 8

• Manufacturer Part Number: SI2302DS,215
• Description: MOSFET N-CH 20V 2.5A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI2302DS,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 650mV @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Gate Charge Qg: 5.4 nC
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 56 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056632215 SI2302DS T/R

Philips Semiconductors
9397 750 09107
Product data
Fig 12. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
10
8
6
4
2
0
0
V GS = 0 V
0.4
150 ºC
GS
= 0 V
0.8
T j = 25 ºC
V SD (V)
03ae97
1.2
Rev. 02 — 20 November 2001
N-channel enhancement mode field-effect transistor
Fig 13. Gate-source voltage as a function of gate
I
D
= 3.6 A; V
V GS
(V)
charge; typical values.
5
4
3
2
1
0
0
I D = 3.6 A
T j = 25 ºC
V DD = 10 V
DD
1
= 10 V
2
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
3
4
SI2302DS
Q G (nC)
5
03ae99
6
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