SI2307CDS-T1-GE3 Vishay, SI2307CDS-T1-GE3 Datasheet

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SI2307CDS-T1-GE3

Manufacturer Part Number
SI2307CDS-T1-GE3
Description
MOSFET P-CH 30V 3.5A SOT23-3
Manufacturer
Vishay
Datasheet

Specifications of SI2307CDS-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
88 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
340pF @ 15V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.088 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
138mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-23
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2307CDS-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2307CDS-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
201 580
Part Number:
SI2307CDS-T1-GE3
Manufacturer:
TI
Quantity:
2 016
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SI2307CDS-T1-GE3
Manufacturer:
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Quantity:
180
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SI2307CDS-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2307CDS-T1-GE3
0
Company:
Part Number:
SI2307CDS-T1-GE3
Quantity:
7 630
Company:
Part Number:
SI2307CDS-T1-GE3
Quantity:
6 000
Company:
Part Number:
SI2307CDS-T1-GE3
Quantity:
11 000
Company:
Part Number:
SI2307CDS-T1-GE3
Quantity:
1 900
Company:
Part Number:
SI2307CDS-T1-GE3
Quantity:
11 000
Part Number:
SI2307CDS-T1-GE3/N7
Manufacturer:
SAMHOP
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
S
0.138 at V
0.088 at V
1
2
Si2307CDS (N7)*
* Marking Code
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
(SOT-23)
Top View
TO-236
DS(on)
GS
GS
= - 4.5 V
J
a, b
(Ω)
= - 10 V
= 150 °C)
a, c
3
P-Channel 30-V (D-S) MOSFET
D
a, b
a, b
I
D
- 2.7
- 2.2
(A)
a, b
c
A
= 25 °C, unless otherwise noted
Q
Steady State
4.1 nC
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• Load Switch for Portable Devices
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
90
55
G
P-Channel MOSFET
- 55 to 150
- 0.91
- 2.7
- 2.2
1.1
0.7
Limit
± 20
- 2.8
- 1.5
1.14
- 3.5
- 30
- 12
260
1.8
a, b
a, b
a, b
a, b
a, b
S
D
Maximum
115
70
Vishay Siliconix
Si2307CDS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI2307CDS-T1-GE3 Summary of contents

Page 1

... TO-236 (SOT-23 Top View Si2307CDS (N7)* * Marking Code Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free) Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width Continuous Source-Drain Diode Current ...

Page 2

... Si2307CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68768 S-81580-Rev. A, 07-Jul-08 New Product 1 Si2307CDS Vishay Siliconix 2.0 1.5 1 ° 125 ° °C C 0.0 1.0 1.5 2.0 2.5 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 600 450 C iss 300 150 C oss ...

Page 4

... Si2307CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ° 150 °C J 0.1 T 0.01 0.001 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0 250 µA D 0.2 0.0 -0.2 -0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.4 0.3 0 ° ...

Page 5

... Document Number: 68768 S-81580-Rev. A, 07-Jul-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si2307CDS Vishay Siliconix 100 10 Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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