SI2307CDS-T1-GE3 Vishay, SI2307CDS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2307CDS-T1-GE3
• Description: MOSFET P-CH 30V 3.5A SOT23-3
• Manufacturer: Vishay

Specifications of SI2307CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 340pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 138mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2307CDS-T1-GE3TR

Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
-0.2
-0.4
0.01
0.6
0.4
0.2
0.0
0.1
10
- 50
1
0.0
T
J
- 25
= 150 °C
Source-Drain Diode Forward Voltage
0.3
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 25 °C
J
25
- Temperature (°C)
0.6
50
I
D
= 250 µA
T
0.9
J
75
= - 50 °C
0.01
100
0.1
100
10
1
0.1
1.2
I
D
Safe Operating Area, Junction-to-Ambient
* V
125
Limited by R
Single Pulse
= 1 mA
T
A
GS
= 25 °C
New Product
> minimum V
150
1.5
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
= 3.5 A
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.1
2
V
100
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
T
A
= 25 °C
T
T
S-81580-Rev. A, 07-Jul-08
Document Number: 68768
J
J
10
= 125 °C
= 25 °C
6
100
8
1000
10