SI2307CDS-T1-GE3 Vishay, SI2307CDS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2307CDS-T1-GE3
• Description: MOSFET P-CH 30V 3.5A SOT23-3
• Manufacturer: Vishay

Specifications of SI2307CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 340pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 138mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2307CDS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
0.20
0.15
0.10
0.05
0.00
12
10
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
V
= 2.5 A
GS
= 10 thru 6 V
V
GS
V
0.5
DS
3
2
Output Characteristics
Q
= 4.5 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
V
DS
V
GS
= 7.5 V
1.0
6
4
= 10 V
V
DS
= 15 V
V
DS
V
1.5
GS
9
6
= 22.5 V
V
V
V
= 5 V
GS
GS
GS
= 4 V
= 2 V
= 3 V
New Product
2.0
12
8
600
450
300
150
2.0
1.5
1.0
0.5
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
1.0
0
I
D
C
On-Resistance vs. Junction Temperature
= 3.2 A
rss
- 25
1.5
C
oss
6
T
V
V
C
GS
Transfer Characteristics
DS
0
T
= 125 °C
T
J
C
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
iss
2.0
= 25 °C
25
Capacitance
12
2.5
50
Vishay Siliconix
Si2307CDS
18
T
75
C
3.0
= - 55 °C
www.vishay.com
V
100
GS
V
24
GS
3.5
= 10 V
125
= 4.5 V
150
4.0
30
3