SI2307CDS-T1-GE3 Vishay, SI2307CDS-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI2307CDS-T1-GE3
• Description: MOSFET P-CH 30V 3.5A SOT23-3
• Manufacturer: Vishay

Specifications of SI2307CDS-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 340pF @ 15V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 138mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-23
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2307CDS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
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10
10
-4
-4
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0.05
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0.05
0.02
0.2
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
Single Pulse
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-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
New Product
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
1
10
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Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
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- T
t
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Vishay Siliconix
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thJF
t
t
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