FQNL2N50BTA Fairchild Semiconductor, FQNL2N50BTA Datasheet

MOSFET N-CH 500V 0.35A TO-92L

FQNL2N50BTA

Manufacturer Part Number
FQNL2N50BTA
Description
MOSFET N-CH 500V 0.35A TO-92L
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQNL2N50BTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 Ohm @ 175mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
1.5W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.35 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQNL2N50BTA
Manufacturer:
SANKEN
Quantity:
3 000
Company:
Part Number:
FQNL2N50BTA
Quantity:
18 000
©2001 Fairchild Semiconductor Corporation
FQNL2N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
= 25°C)
Parameter
T
C
C
C
FQNL Series
= 25°C unless otherwise noted
TO-92L
= 25°C)
= 100°C)
(Note 1)
(Note 1)
(Note 1)
(Note 2)
Features
• 0.35A, 500V, R
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 4.0 pF)
• Fast switching
• Improved dv/dt capability
Typ
DS(on)
--
G
FQNL2N50B
!
!
-55 to +150
= 5.3
0.012
0.35
0.22
0.35
0.15
300
500
1.4
4.5
1.5
! "
! "
30
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
83
QFET
GS
= 10 V
March 2001
Units
W/°C
Units
Rev. A, March 2001
°C/W
V/ns
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQNL2N50BTA Summary of contents

Page 1

... T L 1/8" from case for 5 seconds Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient JA ©2001 Fairchild Semiconductor Corporation Features • 0.35A, 500V, R • Low gate charge ( typical 6.0 nC) • Low Crss ( typical 4.0 pF) • Fast switching • Improved dv/dt capability TO-92L FQNL Series T = 25° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature ≤ 2.1A, di/dt ≤ 200A ≤ DSS, 3. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 A GS ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 350 300 250 C iss 200 C oss 150 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 10 ※ Note : 1. 250μ s Pulse Test 25℃ 10V GS = 20V GS ※ Note : T = 25℃ ...

Page 4

... T = 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Note : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 0.40 0.35 0.30 100 0.25 100 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 4.90 0.50 0.10 3.90 ©2001 Fairchild Semiconductor Corporation TO-92L 0.20 0.70MAX. 0.80 0.10 1.00MAX. 1.27TYP [1.27 ] 0.20 2.54 TYP 0.20 0.45 0.10 Rev. A, March 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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