FQNL2N50BTA Fairchild Semiconductor, FQNL2N50BTA Datasheet - Page 4

• Manufacturer Part Number: FQNL2N50BTA
• Description: MOSFET N-CH 500V 0.35A TO-92L
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQNL2N50BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
-3
1
0
Figure 9. Maximum Safe Operating Area
-100
10
Figure 7. Breakdown Voltage Variation
0
-50
T
vs. Temperature
V
J
, Junction Temperature [
DS
10
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
1 0
C
J
2
1
0
= 150
= 25
- 4
DC
o
D = 0 .5
C
0 .0 1
o
0 .0 5
0 .0 2
DS(on)
C
0 .1
0 .2
50
10 s
1 s
Figure 11. Transient Thermal Response Curve
100 ms
100
10
1 0
(Continued)
2
o
- 3
10 ms
C]
s i n g l e p u ls e
※ Note :
1. V
2. I
t
1
1 ms
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
100 s
150
= 0 V
1 0
- 2
200
10
3
1 0
- 1
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
0
P
-50
DM
θ
J M
50
J C
- T
vs. Case Temperature
( t) = 8 3 ℃ /W M a x .
C
T
vs. Temperature
= P
J
T
t
, Junction Temperature [
1
C
0
t
1 0
, Case Temperature [ ℃ ]
2
D M
1
75
* Z
1
θ
/t
2
J C
( t)
50
100
1 0
2
100
o
C]
125
※ Note :
1. V
2. I
150
D
GS
= 1.05 A
= 10 V
Rev. A, March 2001
200
150