FQNL2N50BTA Fairchild Semiconductor, FQNL2N50BTA Datasheet - Page 5

• Manufacturer Part Number: FQNL2N50BTA
• Description: MOSFET N-CH 500V 0.35A TO-92L
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQNL2N50BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
10V
10V
12V
12V
3mA
3mA
200nF
200nF
R
R
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
300nF
300nF
V
V
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
Same Type
Same Type
DUT
DUT
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DS
DS
V
V
10V
10V
V
V
V
V
GS
GS
DS
DS
GS
GS
10%
10%
Q
Q
90%
90%
gs
gs
t
t
d(on)
d(on)
t
t
on
on
t
t
r
r
Q
Q
Q
Q
g
g
gd
gd
Charge
Charge
t
t
d(off)
d(off)
t
t
off
off
t
t
f
f
Rev. A, March 2001