FQNL2N50BTA Fairchild Semiconductor, FQNL2N50BTA Datasheet - Page 3

• Manufacturer Part Number: FQNL2N50BTA
• Description: MOSFET N-CH 500V 0.35A TO-92L
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQNL2N50BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
350
300
250
200
150
100
10
10
10
50
18
15
12
0
9
6
3
0
-1
-2
10
0
10
0.0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
0.5
Drain Current and Gate Voltage
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
1.0
V
V
DS
DS
1.5
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
10
D
, Drain Current [A]
0
0
C
C
2.0
C
iss
oss
rss
V
2.5
GS
= 20V
V
GS
3.0
= 10V
C
C
C
※ Note :
iss
oss
rss
1. 250μ s Pulse Test
2. T
※ Note : T
10
= C
10
= C
= C
1
1
C
3.5
gs
gd
ds
= 25℃
+ C
+ C
※ Note :
gd
gd
1. V
2. f = 1 MHz
J
(C
= 25℃
ds
GS
4.0
= shorted)
= 0 V
4.5
10
10
10
10
12
10
-1
0
8
6
4
2
0
-1
0.2
0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
150℃
4
V
V
150℃
25℃
2
GS
0.6
Q
SD
and Temperature
V
G
, Gate-Source Voltage [V]
DS
, Source-Drain Voltage [V]
V
, Total Gate Charge [nC]
V
DS
= 400V
DS
= 250V
25℃
= 100V
3
0.8
6
4
-55℃
1.0
※ Note
※ Note :
1. V
2. 250μ s Pulse Test
5
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
1.2
= 50V
= 0V
D
6
= 2.1 A
1.4
Rev. A, March 2001
10
7