FQNL2N50BTA Fairchild Semiconductor, FQNL2N50BTA Datasheet - Page 2

• Manufacturer Part Number: FQNL2N50BTA
• Description: MOSFET N-CH 500V 0.35A TO-92L
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQNL2N50BTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
3. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
4. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 2.1A, di/dt ≤ 200A/ s, V
DSS
T
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
Parameter
≤ BV
DSS,
Starting T
J
T
= 25°C
C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 500 V, V
= 400 V, T
= V
= V
= 50 V, I
= 25 V, V
= 400 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 250 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
GS
, I
, I
D
S
S
D
D
D
D
= 250 A
= 0.35 A
= 2.1 A,
GS
DS
D
D
= 250 A
= 250 mA
DS
= 0.175 A
GS
C
= 0.175 A
= 2.1 A,
= 2.1 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 3, 4)
(Note 3, 4)
(Note 3)
(Note 3)
Min
500
2.3
3.6
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--
0.48
0.72
0.69
Typ
180
195
3.0
4.3
4.2
6.0
1.3
3.0
30
25
10
20
--
--
--
--
--
--
--
--
4
6
-100
Max
0.35
100
230
3.7
5.0
5.3
8.0
1.4
1.4
10
40
20
60
30
50
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1
6
Rev. A, March 2001
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
A
A
V
C
A
A