FDD8453LZ Fairchild Semiconductor, FDD8453LZ Datasheet - Page 3

• Manufacturer Part Number: FDD8453LZ
• Description: MOSFET N-CH 40V 16.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8453LZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 16.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3515pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0067 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.4 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8453LZTR

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
Typical Characteristics
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On- Resistance
-75
Figure 1.
0
0
1
0.0
Figure 5. Transfer Characteristics
V
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
GS
GS
DS
I
V
-50
D
GS
vs Junction Temperature
= 10V
= 4.5V
= 15A
= 5V
V
= 10V
DS
0.4
-25
V
T
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
J
GS
,
2
T
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
J
T
= 25
J
0
= 150
V
GS
o
0.8
C
25
o
= 4V
C
µ
s
3
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
50
T
J
1.2
T
= 25°C unless otherwise noted
J
75
= -55
o
V
V
4
100 125 150
C
GS
o
GS
C )
1.6
= 3.5V
= 3V
µ
s
5
2.0
3
1E-3
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
21
18
15
12
10
9
6
3
1
0.0
Figure 2.
Figure 4.
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
0.2
SD
= 0V
V
V
20
T
, BODY DIODE FORWARD VOLTAGE (V)
GS
GS
Normalized On-Resistance
J
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
= 150
I
D
4
Source Voltage
= 3V
Source to Drain Diode
,
I
D
DRAIN CURRENT (A)
0.4
= 15A
o
C
40
V
GS
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
= 3.5V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
J
J
V
60
= 125
= 25
GS
= 4.5V
0.8
o
C
o
C
T
T
J
J
8
= 25
= -55
80
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V
V
1.0
GS
GS
o
C
o
C
= 4V
= 10V
µ
µ
s
s
100
1.2
10