FDD8453LZ Fairchild Semiconductor, FDD8453LZ Datasheet - Page 4

• Manufacturer Part Number: FDD8453LZ
• Description: MOSFET N-CH 40V 16.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8453LZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 16.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3515pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0067 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.4 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8453LZTR

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
Typical Characteristics
Figure 11. Maximum Continuous Drain
Figure 7.
80
60
40
20
10
20
10
0
8
6
4
2
0
1
0.01
Current vs Ambient Temperature
25
0
Figure 9.
R
Limited by Package
I
D
θ
JC
= 15A
= 1.9
Switching Capability
Gate Charge Characteristics
0.1
10
50
o
V
Unclamped Inductive
t
C/W
DD
T
AV
C
, TIME IN AVALANCHE (ms)
,
= 20V
Q
T
CASE TEMPERATURE (
g
J
, GATE CHARGE (nC)
= 125
20
75
1
V
V
o
V
DD
C
DD
GS
= 15V
= 25V
= 4.5V
T
J
100
30
10
= 25°C unless otherwise noted
T
J
= 25
o
V
C )
GS
100
125
40
o
C
= 10V
1000
150
50
4
Figure 10.
4000
1000
200
100
10
10
10
10
100
10
10
10
10
10
0.1
10
0.1
1
-1
-2
-3
-4
4
3
2
1
0
0.1
0
THIS AREA IS
LIMITED BY r
Figure 8.
Figure 12.
f = 1MHz
V
V
GS
GS
= 0V
= 0V
Gate Leakage Current vs Gate to
5
V
V
V
DS
DS
to Source Voltage
GS ,
, DRAIN TO SOURCE VOLTAGE (V)
T
Source Voltage
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
J
ds(on)
Capacitance vs Drain
GATE TO SOURCE VOLTAGE (V)
= 150
SINGLE PULSE
T
R
T
J
C
θ
10
Forward Bias Safe
1
JC
= MAX RATED
= 25
1
o
= 1.9
C
o
C
o
C/W
15
T
J
= 25
o
C
10
20
C
C
C
iss
oss
rss
10
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25
100us
10ms
1ms
DC
40
100
30