FDD8453LZ Fairchild Semiconductor, FDD8453LZ Datasheet - Page 6

• Manufacturer Part Number: FDD8453LZ
• Description: MOSFET N-CH 40V 16.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8453LZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 16.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3515pF @ 20V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0067 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16.4 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8453LZTR

©2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
Typical Characteristics
0.002
0.01
0.1
2
1
10
-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
-2
T
Figure 16.
J
SINGLE PULSE
R
(
Note 1b
= 25°C unless otherwise noted
θ
JA
= 96
)
o
C/W
10
Transient Thermal Response Curve
-1
t, RECTANGULAR PULSE DURATION (s)
6
10
0
10
NOTES:
DUTY FACTOR: D = t
PEAK T
1
J
= P
DM
x Z
P
θJA
DM
1
10
/t
x R
2
2
θJA
t
1
+ T
t
2
A
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10
3