FDA16N50_F109 Fairchild Semiconductor, FDA16N50_F109 Datasheet

MOSFET N-CH 500V 16.5A TO-3P

FDA16N50_F109

Manufacturer Part Number
FDA16N50_F109
Description
MOSFET N-CH 500V 16.5A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA16N50_F109

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 8.3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1945pF @ 25V
Power - Max
205W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16.5 A
Power Dissipation
205 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDA16N50 / FDA16N50_F109 Rev. B1
FDA16N50 / FDA16N50_F109
500V N-Channel MOSFET
Features
• 16.5A, 500V, R
• Low gate charge ( typical 32 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 20 pF)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
DS(on)
= 0.38Ω @V
G
D
S
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
= 10 V
Parameter
C
= 25°C)
TO-3P
FDA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FDA16N50
-55 to +150
16.5
16.5
20.5
500
±30
780
205
300
9.9
4.5
2.1
S
66
D
Max
0.6
40
--
UniFET
July 2007
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDA16N50_F109 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA16N50 / FDA16N50_F109 Rev. B1 Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 16.5A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA16N50 / FDA16N50_F109 Rev. B1 Package Reel Size TO-3P - TO-3PN - T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... Drain Current and Gate Voltage 0.6 0 10V GS 0.4 0.3 0 Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C 2000 iss 1000 C rss Drain-Source Voltage [V] DS FDA16N50 / FDA16N50_F109 Rev. B1 Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : 0.2 ...

Page 4

... Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited DS(on Drain-Source Voltage [ FDA16N50 / FDA16N50_F109 Rev. B1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current 20 µ µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDA16N50 / FDA16N50_F109 Rev. B1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA16N50 / FDA16N50_F109 Rev. B1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 15.60 13.60 ±0.10 ø3.20 ±0.20 2.00 3.00 ±0.20 ±0.20 1.00 5.45TYP ±0.30 [5.45 ] FDA16N50 / FDA16N50_F109 Rev. B1 TO-3P ±0.20 ±0.20 9.60 ±0.20 5.45TYP ±0.30 [5. 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDA16N50 / FDA16N50_F109 Rev. B1 TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA16N50 / FDA16N50_F109 Rev. B1 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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