FDA16N50_F109 Fairchild Semiconductor, FDA16N50_F109 Datasheet - Page 2

• Manufacturer Part Number: FDA16N50_F109
• Description: MOSFET N-CH 500V 16.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA16N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA16N50 / FDA16N50_F109 Rev. B1
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.1mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
≤ 16.5A, di/dt ≤ 200A/µs, V
DSS
FDA16N50
FDA16N50
J
AS
= 16.5A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
FDA16N50_F109
DD
Parameter
≤ BV
FDA16N50
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
T
= 25°C
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-3PN
TO-3P
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 500V, V
= 400V, T
= V
= 40V, I
= 25V, V
= 400V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 250V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 16.5A
= 16A
= 250µA
DS
GS
D
D
DS
= 8.3A
GS
C
= 8.3A
= 250µA
= 16A
= 16A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
-
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
-
-
3.0
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Typ.
1495
0.31
235
150
490
0.5
8.5
5.0
20
23
40
65
80
32
14
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Quantity
Max Units
1945
-100
0.38
100
310
310
140
170
www.fairchildsemi.com
5.0
9.2
1.4
30
37
10
90
45
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1
--
--
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--
30
30
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V