FDA16N50_F109 Fairchild Semiconductor, FDA16N50_F109 Datasheet - Page 3

• Manufacturer Part Number: FDA16N50_F109
• Description: MOSFET N-CH 500V 16.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA16N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA16N50 / FDA16N50_F109 Rev. B1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
10
4000
3000
2000
1000
0.6
0.5
0.4
0.3
0.2
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
10
V
V
C
C
C
DS
DS
oss
iss
rss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
15
10
10
, Drain Current [A]
0
0
V
GS
= 10V
20
25
C
C
C
iss
oss
rss
V
= C
= C
= C
GS
10
30
* Note : T
gs
gd
* Notes :
ds
10
= 20V
1
+ C
1. 250
2. T
+ C
1
gd
gd
C
(C
= 25
* Note ;
µ
J
s Pulse Test
ds
1. V
2. f = 1 MHz
= 25
35
= shorted)
o
C
GS
o
C
= 0 V
40
3
10
10
10
10
12
10
1
0
1
0
0.2
8
6
4
2
0
2
0
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
Variation vs. Source Current
0.6
25
150
4
o
C
o
25
C
150
0.8
10
o
V
C
V
o
and Temperatue
GS
SD
Q
C
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
G
1.0
, Total Gate Charge [nC]
V
V
V
DS
DS
DS
6
= 400V
= 100V
= 250V
1.2
20
1.4
-55
o
C
1.6
8
1.8
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
* Note : I
30
GS
2.0
DS
10
µ
= 0V
µ
= 40V
s Pulse Test
s Pulse Test
D
www.fairchildsemi.com
2.2
= 16A
2.4
12
40