FDA16N50_F109 Fairchild Semiconductor, FDA16N50_F109 Datasheet - Page 7

• Manufacturer Part Number: FDA16N50_F109
• Description: MOSFET N-CH 500V 16.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA16N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA16N50 / FDA16N50_F109 Rev. B1
Mechanical Dimensions
ø3.20
2.00
3.00
1.00
[5.45
5.45TYP
±0.10
±0.20
±0.20
±0.20
±0.30
]
15.60
13.60
9.60
±0.20
±0.20
±0.20
[5.45
5.45TYP
TO-3P
±0.30
7
]
Dimensions in Millimeters
1.50
1.40
4.80
0.60
www.fairchildsemi.com
+0.15
–0.05
±0.20
±0.20
+0.15
–0.05