FDA16N50_F109 Fairchild Semiconductor, FDA16N50_F109 Datasheet - Page 4

• Manufacturer Part Number: FDA16N50_F109
• Description: MOSFET N-CH 500V 16.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA16N50_F109

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1945pF @ 25V
• Power - Max: 205W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.38 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 205 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA16N50 / FDA16N50_F109 Rev. B1
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
vs. Temperature
-50
V
DS(on)
DS
T
J
, Drain-Source Voltage [V]
, Junction Temperature [
10
0
1
1 0
1 0
1 0
-1
-2
1 0
0
-5
50
D = 0 .5
Figure 11. Transient Thermal Response Curve
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
100
100 ms
1 0
* Notes :
10
DC
1. T
2. T
3. Single Pulse
o
10 ms
C]
-4
2
* Notes :
C
J
= 25
= 150
1. V
2. I
s in g le p u ls e
t
1 ms
1
D
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
GS
= 250
o
150
C
100
o
= 0 V
C
µ
µ
A
10
s
1 0
µ
s
-3
200
(Continued)
4
1 0
-2
20
15
10
5
0
Figure 10. Maximum Drain Current
Figure 8. On-Resistance Variation
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* N o te s :
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-1
θ
J M
J C
(t) = 0 .6
- T
50
-50
C
= P
D M
o
vs. Case Temperature
T
C /W M a x .
1 0
vs. Temperature
T
* Z
C
, Case Temperature [
J
0
, Junction Temperature [
1
/t
θ
J C
0
2
75
(t)
50
1 0
1
100
o
100
C]
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 8.3 A
www.fairchildsemi.com
= 10 V
150
200