IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 3

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
100
100
0.1
10
10
1
1
0.1
1
TOP
BOTTOM
TOP
BOTTOM
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.5V
1
4.5V
10
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
J
10
°
°
100
100
Fig. 4 - Normalized On-Resistance vs. Temperature
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
IRFB11N50A, SiHFB11N50A
1
4.0
-60 -40 -20
T = 150 C
I =
Fig. 3 - Typical Transfer Characteristics
D
J
11A
V
T , Junction Temperature ( C)
5.0
GS
°
J
, Gate-to-Source Voltage (V)
0
T = 25 C
20 40 60
J
6.0
°
V
20µs PULSE WIDTH
7.0
DS
Vishay Siliconix
80 100 120 140 160
= 50V
V
8.0
°
GS
www.vishay.com
=
10V
9.0
3