IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 5

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

Document Number: 91094
S-81243-Rev. B, 21-Jul-08
Fig. 9 - Maximum Drain Current vs. Case Temperature
12
10
8
6
4
2
0
25
Fig. 12a - Unclamped Inductive Test Circuit
R
20 V
G
0.01
V
0.1
DS
0.00001
1
50
T , Case Temperature ( C)
t
C
p
D = 0.50
0.20
0.10
0.05
0.02
0.01
I
AS
D.U.T.
75
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
15 V
Driver
125
°
+
- V
DD
A
A
150
t , Rectangular Pulse Duration (s)
1
0.001
IRFB11N50A, SiHFB11N50A
I
Fig. 12b - Unclamped Inductive Waveforms
AS
90 %
10 %
0.01
V
V
DS
GS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
G
1. Duty factor D = t / t
2. Peak T = P
10V
Notes:
V
t
GS
d(on)
V
DS
J
t
r
t
p
DM
x Z
1
0.1
D.U.T.
thJC
P
2
DM
Vishay Siliconix
R
+ T
D
t
C
d(off)
t
V
1
DS
t
2
t
f
www.vishay.com
+
-
V DD
1
5