IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 6

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

IRFB11N50A, SiHFB11N50A
Vishay Siliconix
www.vishay.com
6
Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
600
500
400
300
200
100
660
640
620
600
580
0
25
0.0
Starting T , Junction Temperature ( C)
1.0
50
I
av
2.0
, Avalanche Current (A)
J
Current
75
3.0
4.0
100
TOP
BOTTOM
5.0
125
6.0
°
4.9A
7.0A
I D
11A
7.0
150
A
10 V
V
Fig. 13a - Basic Gate Charge Waveform
12 V
G
Fig. 13b - Gate Charge Test Circuit
V
GS
Q
Same type as D.U.T.
GS
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
Q
Charge
Q
GD
G
0.3 µF
I
G
Document Number: 91094
S-81243-Rev. B, 21-Jul-08
D.U.T.
I
D
+
-
V
DS