IRFB11N50A Vishay, IRFB11N50A Datasheet - Page 4

• Manufacturer Part Number: IRFB11N50A
• Description: MOSFET N-CH 500V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRFB11N50A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52nC @ 10V
• Input Capacitance (ciss) @ Vds: 1423pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.52 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 11 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB11N50A

IRFB11N50A, SiHFB11N50A
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
2000
1600
1200
800
400
20
16
12
0
8
4
0
1
0
I =
D
6.6A
iss
oss
V
rss
DS
10
Q , Total Gate Charge (nC)
V
C
C
C
G
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
10
= 0V,
= C
= C
= C
20
gs
ds
gd
+ C
+ C
gd
V
V
V
gd
f = 1MHz
DS
DS
DS
FOR TEST CIRCUIT
30
, C
SEE FIGURE
100
= 400V
= 250V
= 100V
ds
SHORTED
40
13
1000
50
A
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
100
100
0.1
0.1
10
10
1
1
0.0
10
T
T
Single Pulse
Fig. 8 - Maximum Safe Operating Area
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
V
V
T = 150 C
DS
SD
°
J
°
0.4
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
100
°
BY R
0.8
T = 25 C
DS(on)
J
10us
100us
1ms
10ms
1000
Document Number: 91094
°
S-81243-Rev. B, 21-Jul-08
1.2
V
GS
= 0 V
10000
1.6