SUM110N04-2M3L-E3 Vishay, SUM110N04-2M3L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-2M3L-E3
• Description: MOSFET N-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-2M3L-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 360nC @ 10V
• Input Capacitance (ciss) @ Vds: 13600pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 110A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 3mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V
• Power Dissipation Pd: 3.75W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110N04-2M3L-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73040
S-80272-Rev. B, 11-Feb-08
350
300
250
200
150
100
0.01
50
0.1
0
2
1
10
0
-4
http://www.vishay.com/ppg?73040.
0.2
Single Pulse
Duty Cycle = 0.5
25
0.02
0.05
T
Maximum Drain Current
C
vs. Case Temperature
50
0.1
- Ambient Temperature (°C)
75
Package Limited
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
Square Wave Pulse Duration (s)
175
10
-2
1000
Limited by r
100
0.1
10
1
0.1
* V
GS
DS(on) *
V
minimum V
DS
Safe Operating Area
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
SUM110N04-2m3L
GS
10
at which r
-1
Vishay Siliconix
DS(on)
10
is specified
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
1
5