IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 2

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
d. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
DS
oss
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy time as C
J
a
= 25 °C, unless otherwise noted
C
oss
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
I
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
eff. (ER)
Q
Q
d(on)
d(off)
I
RRM
GSS
DSS
R
Q
g
Q
t
DS
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
G
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
T
T
T
V
V
V
J
J
J
J
V
GS
GS
GS
= 125 °C
=1 25 °C
= 25 °C
= 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
J
= 400 V, V
= 25 °C, I
V
V
V
V
TYP.
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
oss
0.24
f = 1 MHz, open drain
R
DS
DS
GS
DD
DS
-
-
G
while V
= 500 V, V
= V
= 6.0, V
= 0 V, I
= 250 V, I
V
= 50 V, I
oss
V
T
see fig. 10
V
GS
V
V
J
DS
S
GS
GS
while V
GS
I
DS
DS
= 25 °C
D
V
V
= 14 A, V
= ± 30 V
= 25 V,
, I
DS
= 0 V,
DS
= 23 A, V
see fig. 6 and 13
DS
dI/dt = 100 A/µs
= 0 V, T
= 400 V , f = 1.0 MHz
= 1.0 V , f = 1.0 MHz
D
D
GS
D
= 0 V to 400 V
= 250 µA
= 0 V to 400 V
= 250 µA
is rising fom 0 to 80 % V
D
I
GS
I
= 14 A
D
= 10 V
DS
F
= 23 A
b
D
= 14 A
= 23 A,
= 0 V
= 1 mA
is rising fom 0 to 80 % V
GS
J
DS
G
= 125 °C
= 0 V
b
= 400 V
b
d
MAX.
b
0.34
b
b
D
S
c
d
40
-
MIN.
500
3.0
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
.
DS
S-81352-Rev. A, 16-Jun-08
Document Number: 91209
0.190
TYP.
3600
4800
.
0.27
380
100
220
160
170
220
560
980
1.2
7.6
37
26
94
53
45
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.235
1500
S
150
250
330
840
5.0
2.0
1.5
50
44
72
23
92
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
mA
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
Ω
A
V
A