IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 4

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100000
10000
1000
100
25
20
15
10
1000
10
100
5
0
10
1
0
1
10
Single Pulse
T
T
J
C
Fig. 9 - Maximum Safe Operating Area
= 150 °C
= 25 °C
OPERATION IN THIS AREA LIMITED
100
V DS , Drain-to-Source Voltage (V)
V
DS
V
, Drain-to-Source Voltage (V)
DS
200
100
, Drain-to-Source Voltage (V)
10
V
C
C
C
GS
iss
rss
oss
BY R
= C
= 0 V,
= C
= C
300
gs
gd
ds
DS(ON)
+ C
+ C
Ciss
Crss
Coss
100us
10us
10ms
1ms
400
gd
gd
1000
,
f = 1 MHZ
100
C
ds
500
SHORTED
10000
600
1000
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100.00
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
10.00
1.00
0.10
12
10
25
20
15
10
7
5
2
0
0.0
5
0
0
25
I
T
D
J
= 23
= 150 °C
T
C
24
V
50
, Case Temperature
0.5
SD
Q
, Source-to-Drain Voltage (V)
G
, Total Gate Charge (nC)
V
V
V
48
DS
DS
DS
75
T
J
= 25 °C
1.0
= 400 V
= 250 V
= 100 V
72
100
S-81352-Rev. A, 16-Jun-08
Document Number: 91209
V
1.5
GS
125
96
= 0 V
(°C)
2.0
120
150