IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 6

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
www.vishay.com
6
Fig. 15a - Unclamped Inductive Test Circuit
12 V
V
Fig. 16a - Gate Charge Test Circuit
GS
Same type as D.U.T.
R G
20 V
Current regulator
V DS
0.2 µF
t p
Current sampling resistors
3 mA
I AS
50 kΩ
D.U.T
0.01 Ω
L
0.3 µF
I
G
D.U.T.
15 V
I
D
Driver
+
- V DD
+
-
V
DS
A
Fig. 15b - Unclamped Inductive Waveforms
10 V
Fig. 16b - Basic Gate Charge Waveform
I
AS
V
G
Q
GS
Charge
Q
Q
t
p
GD
G
S-81352-Rev. A, 16-Jun-08
Document Number: 91209
V
DS